| PART |
Description |
Maker |
| ATF-58143 |
Low Noise Enhancement Mode Pseudomorphic HEMT
|
AVAGO TECHNOLOGIES LIMI...
|
| ATF-551M4 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
|
Agilent(Hewlett-Packard)
|
| ATF-541M4-TR2 ATF-541M4 ATF-541M4-BLK ATF-541M4-TR |
ATF-541M4 · Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak
DEMO-ATF-5X1M4A · Demonstration circuit board for ATF-541M4 and ATF-551M4 (2 GHz)
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
SOT223 N-CHANNEL ENHANCEMENT MODE
|
Zetex Semiconductors
Diodes Incorporated
|
| ATF-53189 |
ATF-53189 · Single Voltage E-pHEMT Low Noise 40 dBm OIP3 in SOT-89 package
Enhancement Mode Pseudomorphic HEMT in SOT 89 Package
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| LTC1434 LTC1433 LTC1434IGN LTC1433CGN LTC1433IGN 1 |
From old datasheet system
450mA/ Low Noise Current Mode Step-Down DC/DC Converters
450mA, Low Noise Current Mode Step-Down DC/DC Converters
|
Linear Technology
|
| AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存，未定义建筑
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc.
Unisonic Technologies Co., Ltd.
Sullins Connector Solutions, Inc.
Cypress Semiconductor, Corp.
|
| 7105 7104 7111 7101 7109 7102 7110 7107 7106 7119 |
Common Mode RMI Inductors
Low Noise, Low Drift Single-Supply Operational Amplifier (Single); Package: PLASTIC DIP; No of Pins: 8; Temperature Range: Industrial
Low Noise, Low Drift Single-Supply Operational Amplifier (Single); Package: SOIC; No of Pins: 8; Temperature Range: Industrial
Low Noise, Low Drift Single-Supply Operational Amplifier (Single); Package: PLASTIC DIP; No of Pins: 8; Temperature Range: TBD
Common Mode EMI Inductors 共模电磁干扰电感
Common Mode EMI Inductors
|
List of Unclassifed Manufacturers
ETC[ETC]
JW Miller
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
| LX5560L LX5560 |
InGaAs - E-Mode pHEMT Low Noise Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| 1N4626 1N4110 1N4620 1N4624 1N4104 1N4627 1N4099 1 |
surface mount silicon Zener diodes 表面贴装硅稳压二极管
ZFKDSA 1.5C-5.0- 6 SO BN-GN
SPC 16/ 6-ST-10,16
GMSTB 2,5/ HC/ 3-GF-7.62
LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250A - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250μA - LOW NOISE
|
Microsemi, Corp.
Knox SemiconductorInc
KNOX[Knox Semiconductor, Inc]
KNOX[Knox Semiconductor Inc]
|
| FP6290 |
Low-Noise Step-Up Current Mode PWM Converter
|
Feeling Technology
|
